Detalls del llibre
The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.
- Provides a comprehensive exploration of the transitions occurring in field-effect transistor technology, covering the historical evolution, current advancements, and future trends in field-effect transistors.
- Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.
- Discuss design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.
- Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.
- Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.
The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.
- Autors Ashish Raman, Prabhat Singh, Naveen Kumar M, Sarabdeep Singh
- ISBN13 9781032876078
- ISBN10 1032876077
- Pàgines 472
- Any Edició 2025
- Fecha de publicación 08/12/2025
Ressenyes i valoracions
Field-Effect Transistors Technology From Sustainability to Next-Generation VLSI Design
- De
- Ashish Raman, Prabhat Singh, Naveen Kumar M, Sarabdeep Singh
- |
- ROUTLEDGE (2025)
- 9781032876078



